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Characteristic Hafnium(IV) oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Chemical formula：HfO2 Molar mass：210.49 g/mol Appearance：off-white powder Density：9.68 g/cm3, solid Melting point：2,758 °C (4,996 °F; 3,031 K) Boiling point：5,400 °C (9,750 °F; 5,670 K) Solubility in water：insoluble Magnetic susceptibility (χ)：−23.0·10−6 cm3/mol Application Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. In recent years, hafnium oxide (as well as doped and oxygen-deficient hafnium oxide) attracts additional interest as a possible candidate for resistive-switching memories and CMOS-compatible ferroelectric field effect transistors (FeFET memory) and memory chips. Becau